JOURNAL OF NON-CRYSTALLINE SOLIDS

 Journal of Non-Crystalline Solids
Volume 303, Issue 1, May 2002
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TE Preface and sponsors
PP vii
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TE Contents
PP ix-xi
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TE Author index
PP xiii-xv
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TE Subject index
PP xvi-xvii
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	Section 1. Oxides and oxynitrides
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AU H.J.Lewerenz et al.
TE Interface engineering of photoelectrochemically prepared Si
   surfaces
PP 1-5
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AU P.Hoffmann, R.P.Mikalo and D.Schmeisser
TE Si(001) surface oxidation by N_{2}O
PP 6-11
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AU H.Boubekeur, T.Mikolajick, A.Bauer, L.Frey and H.Ryssel
TE Effect of barium contamination on gate oxide integrity in high-k
   dram
PP 12-16
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	Section 2. ALCVD of high-k dielectrics deposition and
	characterization
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AU L.G.Gosset et al.
TE Interface and material characterization of thin Al_{2}O_{3}
   layers deposited by ALD using TMA/H_{2}O
PP 17-23
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AU R.Matero et al.
TE Atomic layer deposition of ZrO_{2} thin films using a new
   alkoxide precursor
PP 24-28
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AU S.Ferrari et al.
TE Structural and electrical characterization of ALCVD ZrO_{2} thin
   films on silicon
PP 29-34
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AU Kaupo Kukli et al.
TE Atomic layer deposition of Al_{2}O_{3}, ZrO_{2}, Ta_{2}O_{5},
   and Nb_{2}O_{5} based nanolayered dielectrics
PP 35-39
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	Section 3. Physical and electrical characterization of
	medium-k gate dielectrics
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AU G.Lucovsky
TE Correlations between electronic structure of transition metal
   atoms and performance of high-k gate dielectrics in advanced Si
   devices
PP 40-49
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AU G.Scarel, C.R.Aita, H.Tanaka and K.Hisano
TE Far-infrared spectra of amorphous titanium dioxide films
PP 50-53
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AU P.S.Lysaght et al.
TE Experimental observations of the thermal stability of high-k
   gate dielectric materials on silicon
PP 54-63
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AU T.Leistner et al.
TE MOCVD of titanium dioxide on the basis of new precursors
PP 64-68
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	Section 4. Band alignment of high-k dielectrics with Si:
	measurement and impact on electrical properties
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AU V.V.Afanas'ev, M.Houssa, A.Stesmans, G.J.Adriaenssens and
   M.M.Heyns
TE Band alignment at the interfaces of Al_{2}O_{3} and
   ZrO_{2}-based insulators with metals and Si
PP 69-77
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AU W.H.Ha, M.H.Choo and S.Im
TE Electrical properties of Al_{2}O_{3} film deposited at low
   temperatures
PP 78-82
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AU H.Nohira et al.
TE Characterization of ALCVD-Al_{2}O_{3} and ZrO_{2} layer using
   X-ray photoelectron spectroscopy
PP 83-87
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	Section 5. PLD of high-k dielectrics and
	perovskite structures
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AU X.B.Lu, Y.P.Wang, H.Q.Ling and Z.G.Liu
TE Dielectric properties of Zr-Sn-Ti-O thin films prepared by
   pulsed laser deposition
PP 88-93
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	Section 6. Theory and modelling of high-k dielectrics
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AU J.Robertson
TE Band offsets of high dielectric constant gate oxides on silicon
PP 94-100
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AU A.S.Foster, V.B.Sulimov, F.Lopez Gejo, A.L.Shluger and
   R.M.Nieminen
TE Modelling of point defects in monoclinic zirconia
PP 101-107
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AU S.Blonkowski, M.Regache and A.Halimaoui
TE Non-linear dielectric properties of metal-amorphous-tantalum
   pentoxide-metal structures
PP 108-113
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AU A.M.Stoneham
TE Why model high-k dielectrics?
PP 114-122
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	Section 7. Microstructure analysis of high-k dielectrics
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AU W.F.A.Besling et al.
TE Characterisation of ALCVD Al_{2}O_{3}-ZrO_{2} nanolaminates,
   link between electrical and structural properties
PP 123-133
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AU Jun-Ying Zhang et al.
TE Nanocrystalline TiO_{2} films studied by optical, XRD and FTIR
   spectroscopy
PP 134-138
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AU Seok-Woo Nam et al.
TE Influence of annealing condition on the properties of sputtered
   hafnium oxide
PP 139-143
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AU C.Zhao et al.
TE Thermostability of amorphous zirconium aluminate high-k layers
PP 144-149
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	Section 8. Local structure of high k dielectrics and
	defect characterization
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AU R.Ludeke
TE Electrical characterization of gate oxides by scanning probe
   microscopies
PP 150-161
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AU A.Stesmans, V.V.Afanas'ev and M.Houssa
TE Electron spin resonance analysis of interfacial Si dangling bond
   defects in stacks of ultrathin SiO_{2}, Al_{2}O_{3}, and ZrO_{2}
   layers on (100)Si
PP 162-166
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AU Pierre Boher, Patrick Evrard, Jean Philippe Piel and
   Jean Louis Stehle
TE Characterization of ultrathin gate dielectrics by grazing X-ray
   reflectance and VUV spectroscopic ellipsometry on the same
   instrument
PP 167-174
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AU J.L.Cantin and H.J.von Bardeleben
TE An electron paramagnetic resonance study of the
   Si(100)/Al_{2}O_{3} interface defects
PP 175-178
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	Section 9. Very-high-k dielectrics
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AU P.Petrik et al.
TE Characterisation of Ba_{x}Sr_{1-x}TiO_{3} films using
   spectroscopic ellipsometry, Rutherford backscattering
   spectrometry and X-ray diffraction
PP 179-184
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AU N.Konofaos, E.K.Evangelou, Zhongchun Wang, V.Kugler and
   U.Helmersson
TE Electrical characterisation of SrTiO_{3}/Si interfaces
PP 185-189
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AU Won Seok Choi, Bum Sik Jang, Yonghan Roh, Junsin Yi and
   Byungyou Hong
TE The effect of deposition temperature on the electrical and
   physical properties of the Ba(Zr,Ti)O_{3} thin films
PP 190-193
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AU L.Goux, M.Gervais, A.Catherinot, C.Champeaux and F.Sabary
TE Crystalline and electrical properties of pulsed laser deposited
   BST on platinized silicon substrates
PP 194-200
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