JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 - REGULAR PAPERS, SHORT NOTES & REVIEW PAPERS

 Jpn. J. Appl. Phys., Vol.38,Part 1, No. 1B, 30 January 1999
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	Special Issue: Quantum Dot Structures
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	Quantum Transport
LA eng
TE Theoretical Considerations of Electron Transport in Single and
   Multiple Quantum Dots
AU David K.Ferry, Richard Akis, Dragica Vasileska,
   Nicholas Holmberg, Fuad Badrieh and Jonathan P.Bird
PP 303-307
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LA eng
TE Chaos and Quantum Transport in Antidot Lattices
AU Tsuneya Ando, Seiji Uryu and Satoshi Ishizaka
PP 308-314
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LA eng
TE Linear Conductance through Parallel Quantum Dot Dimerbelow the
   Kondo Temperature
AU Tomosuke Aono, Mikio Eto and Kiyoshi Kawamura
PP 315-318
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LA eng
TE Internal Magnetic Focusing in an Array of Open Quantum Dots
AU Peide D.Ye and Seigo Tarucha
PP 319-321
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LA eng
TE Probing the Discrete Level Spectrum of Open Quantum Dots
AU Jonathan P.Bird, RichardAkis, David K.Ferry, JohnCooper,
   Yoshinobu Aoyagi and TakuoSugano
PP 322-324
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LA eng
TE Modeling of Electron Transport in Corrugated Quantum Wires
AU Yuichi Ochiai, L.-Hung Lin, Kohji Ishibashi, Yoshinobu Aoyagi,
   Takuo Sugano, Nicholas L.Holmberg,Jonathan P.Bird,
   Drgica Vasileska, Richard Akis and David K.Ferry
PP 325-327
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LA eng
TE Zero Field Magnetoresistance Peaks in Open Quantum Dots:Weak
   Localization or a Fundamental Property?
AU Richard Akis, Dragica Vasileska, David K.Ferry and
   Jonathan P.Bird
PP 328-331
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LA eng
TE Conductance through Laterally Coupled Quantum Dots
AU Hiroaki Ueno, Katsuji Moriyasu, Yuuko Wada, Shin-ichi Osako,
   Hitoshi Kubo, Nobuya Mori and Chihiro Hamaguchi
PP 332-335
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LA eng
TE Conductance through Atoms: Dot or Channel?
AU Nobuhiko Kobayashi, Mads Brandbyge and Masaru Tsukada
PP 336-338
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LA eng
TE Computer Simulation of Tunneling Transfer and Formation of
   Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
AU Mitsuru Ishida, Masahito Yamaguchi and Nobuhiko Sawaki
PP 339-342
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LA eng
TE Novel Approach for Lateral Current Confinement in Vertical
   Resonant Tunneling Devices
AU Boel Gustafson, Niclas Carlsson,Takashi Fukui,
   Andrei Litwin,Ivan Maximov,Eva-Lena Sarwe, Werner Seifert,
   Lars-Erik Wernersson and Lars Samuelson
PP 343-346
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LA eng
TE Non-Linear Transports in Evaporated C_{60} Cluster Films
AU Ying Xu, Jun-ya Kondo, Yutaka Shionoiri and Yuichi Ochiai
PP 347-349
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LA eng
TE Duality between Single-Electron Phenomena and Flux
   Quantizationin Mesoscopic Superconductors
AU Shingo Katsumoto, Hideki Sato and Yasuhiro Iye
PP 350-353
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LA eng
TE Model Study of Ballistic S-2DEG-S Josephson Field Effect
   Transistors
AU Goeran Wendin, Vitaly S.Shumeiko, Peter Samuelsson and
   Hideaki Takayanagi
PP 354-356
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	Artificial Atom and Phase Coherence
LA eng
TE Electronic Properties and Mid-Infrared Transitions in
   Self-Assembled Quantum Dots
AU Jean-Pierre Leburton, Leornado R.C.Fonseca,
   John Shumway, David Ceperley and Richard M.Martin
PP 357-365
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LA eng
TE Theory of Artificial Atoms and Molecules using Semiconductor
   Quantum Dots
AU Kiyoshi Kawamura and Mikio Eto
PP 366-371
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LA eng
TE Several- and Many-Electron Artificial-Atoms at Filling Factors
   between 2 and 1
AU Guy Austing, Yasuhiro Tokura, Takashi Honda, Seigo Tarucha,
   Martin Danoesastro, Jorg Janssen, Tjerk Oosterkamp and
   Leo Kouwenhoven
PP 372-375
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LA eng
TE Many-Body States in a Quantum Dot under High Magnetic Fields
AU Mikio Eto
PP 376-379
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LA eng
TE Magnetic-Field-Induced Transitions of Many-Electron States
   inQuantum Dots
AU Akiko Natori and Daisuke Nakamura
PP 380-383
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LA eng
TE Many-Body Effects in Coherent Transmission through a Quantum
   Dotwith Two Degenerate Levels
AU Hiroshi Akera
PP 384-387
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LA eng
TE lambda Phase Relaxation and Non-Equilibrium Transport Properties
   through Multilevel Quantum Dot
AU Yasuhiro Funabashi, Kazuhiko Ohtsubo, Mikio Eto and
   Kiyoshi Kawamura
PP 388-391
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LA eng
TE Phase Shift of an Electron Wave through a Quantum Dot and
   Aharonov-Bohm Effect
AU Yasuhiro Asano and Masafumi Ohi
PP 392-395
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	Novel Single Electron Devices
LA eng
TE Fabrication of Nano-Scale Point Contact
   Metal-Oxide-Semiconductor Field-Effect-Transistors Using
   Micrometer-Scale Design Rule
AU Hiroki Ishikuro and Toshiro Hiramoto
PP 396-398
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LA eng
TE Calculation of Electrical Properties of Novel Double-Barrier
   Metal Oxide Semiconductor Transistors
AU Tsuyoshi Hatano, Akihiro Nomura, Masayoshi Yoshida,
   Anri Nakajima, Kentaro Shibahara and Shin Yokoyama
PP 399-402
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LA eng
TE Reliability of Single Electron Transistor Circuits Based
   on E_{b}/N_{0}-Bit Error Rate Characteristics
AU Satoshi Shimano, Kazuya Masu and KazuoTsubouchi
PP 403-405
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LA eng
TE Implementation of Single-Electron Transistor with Resistive Gate
AU Yuri Pashkin, Yasunobu Nakamura and Jaw-Shen Tsai
PP 406-409
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LA eng
TE Voltage Gain in GaAs-Based Lateral Single-Electron
   Transistors Having Schottky Wrap Gates
AU Yoshihiro Satoh, Hiroshi Okada, Kei-ichiroh Jinushi,
   Hajime Fujikura and Hideki Hasegawa
PP 410-414
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LA eng
TE GaAs Single Electron Transistors Fabricated by Selective Area
   Metalorganic Vapor Phase Epitaxy and Their Application to Single
   Electron Logic Circuits
AU Fumito Nakajima, Kazuhide Kumakura, Junichi Motohisa and
   Takasi Fukui
PP 415-417
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LA eng
TE Single-Electron Devices Formed by Self-Ordering Metal
   Nanodroplet Arrays on Epitaxial CaF_{2} Film
AU Koji Kawasaki, Marie Mochizuki and Kazuo Tsutsui
PP 418-420
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LA eng
TE Control of Dot Size and Tunneling Barrier Profile
   in In_{0.53}Ga_{0.47}As Coupled Quantum Wire-Dot Structures Grown
   by SelectiveMolecular Beam Epitaxy on Patterned InP Substrates
AU Hajime Fujikura, Yuuki Hanada, Tsutomu Muranaka and
   Hideki Hasegawa
PP 421-424
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LA eng
TE Effects of Interface Traps on Charge Retention Characteristics
   in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
AU Yi Shi, Kenichi Saito, Hiroki Ishikuro and Toshiro Hiramoto
PP 425-428
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LA eng
TE A Simple Model of a Single-Electron Floating Dot Memory
   forCircuit Simulation
AU Shuhei Amakawa, Kouichi Kanda, Minoru Fujishima and Koichiro Hoh
PP 429-432
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LA eng
TE Single Electron Transfer Logic Gate Family
AU Nobuyuki Yoshikawa, Chikashi Fukuzato and Masanori Sugahara
PP 433-438
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LA eng
TE Method for Determining Weight Coefficients for
   Quantum Boltzmann Machine Neuron Devices
AU Nan-Jian Wu, Hassu Lee, Yoshihito Amemiya and Hitoshi Yasunaga
PP 439-442
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	Nanostructure Formation
LA eng
TE Novel GaAs Quantum Wire and Dot Arrays by Hydrogen-Assisted
   Molecular Beam Epitaxy on High-Index Substrates
AU Klaus H.Ploog and Richard Noetzel
PP 443-448
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LA eng
TE Spatially Resolved Spectroscopy of Single and Coupled Quantum
   Dots
AU Gerhard Abstreiter, Max Bichler, Markus Markmann,
   Gert Schedelbeck, Werner Wegscheider and Artur Zrenner
PP 449-454
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LA eng
TE Spatially Selective Formation of InAs Self-organized QuantumDots
   on PatternedGaAs (100) Substrates
AU Ruth Zhang, Raymond Tsui, Kumar Shiralagi and Herb Goronkin
PP 455-458
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LA eng
TE High-Temperature Metalorganic Vapor Phase Epitaxial Growth of
   GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on
   GaAs (111)B Substrates
AU Tomoko Tsujikawa, Toshifumi Irisawa, Hiroyuki Yaguchi,
   Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
PP 459-464
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LA eng
TE Coulomb Blockade Effects in a Highly Doped Silicon Quantum
   WireFabricated on Novel Molecular Beam Epitaxy Grown Material
AU Thomas Koester, Frank Goldschmidtboeing, Birgit Hadam,
   Josef Stein, Stefan Altmeyer, Bernd Spangenberg, Heinrich Kurz,
   Robert Neumann, Karl Brunner and Gerd Abstreiter
PP 465-468
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LA eng
TE Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect
   Transistor (MOSFET) Structure
AU Maroun Khoury, Allen Gunther, David P.Pivin Jr., Mary Jo Rack
   and David K.Ferry
PP 469-472
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LA eng
TE Lifetime of Confined LO Phonons in Quantum Dots and Its Impact
   on Phonon Bottleneck Issue
AU Xin-Qi Li, Hajime Nakayama and Yasuhiko Arakawa
PP 473-476
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LA eng
TE Metal-Based Room-Temperature Operating Single Electron
   DevicesUsing ScanningProbe Oxidation
AU Kazuhiko Matsumoto, Yoshitaka Gotoh, TatsuroMaeda, John A.Dagata
   and JamesS.Harris
PP 477-479
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LA eng
TE Coulomb Blockade Observed in InAs/AlGaSb NanostructuresProduced
   by an Atomic Force Microscope Oxidation Process
AU Shigehiko Sasa, Takatoshi Ikeda, Kazutomo Anjiki and
   Masataka Inoue
PP 480-482
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LA eng
TE Fabrication of Nanopit Arrays on Si(111)
AU Won-chul Moon,Tatsuo Yoshinobu and Hiroshi Iwasaki
PP 483-486
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LA eng
TE Al Adatom Migration on the Partly H-Terminated Si(111) Surface
AU Tadatsugu Hoshino, Nobuyuki Enomoto, Masayuki Hata and
   Minoru Tsuda
PP 487-490
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LA eng
TE Self-Organization of High-Density III-V Quantum Dotson
   High-Index Substrates
AU Mitsuo Kawabe, Kohichi Akahane, Sheng Lan, Kennji Okino,
   Yositaka Okada and Hiromichi Koyama
PP 491-495
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LA eng
TE Scanning Transmission Electron Microscopy (STEM) Studyof
   InAs/GaAs Quantum Dots
AU Ray Murray, Surama Malik, PhilipSiverns, David Childs,
   Christine Roberts, Bruce Joyce and Helen Davock
PP 496-499
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LA eng
TE Atomic Structure of Faceted Planes of InAs Quantum Dots on
   GaAs(001) Studiedby Scanning Tunneling Microscopy
AU Qi-Kun Xue, Yukio Hasegawa, Hisashi Kiyama and Toshio Sakurai
PP 500-503
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LA eng
TE Crystallographic Properties of Closely Stacked InAs Quantum
   DotsInvestigated by Ion Channeling
AU Tsuyoshi Ishigure, Tetsuya Haga, Shunichi Muto, Yoshiaki Nakata
   and Naoki Yokoyama
PP 504-506
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LA eng
TE Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots
   Grown by Metal-Organic Vapor Phase Epitaxy
AU Hong-Wen Ren, Mitsuru Sugisaki, Jeong-Sik Lee, Shigeo Sugou and
   Yasuaki Masumoto
PP 507-510
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LA eng
TE A Novel Method to Fabricate a Molecular Quantum Structure:
   Selective Growth of C_{60} on Layered Material Heterostructures
AU Keiji Ueno, Kentaro Sasaki, Koichiro Saiki and Atsushi Koma
PP 511-514
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LA eng
TE Separation between Surface Adsorption and Reaction ofNH_{3} on
   Si(100) by Flash Heating
AU Takeshi Watanabe, Masao Sakuraba, TakashiMatsuura and
   Junichi Murota
PP 515-517
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LA eng
TE Structure and Photoelectrochemical Properties of Laminated
   Monoparticle Layers of CdS and ZnS on Gold
AU Takuya Nakanishi, Bunsho Ohtani and Kohei Uosaki
PP 518-521
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LA eng
TE Controlling Microscopic Surface Structure, Crystalline Size and
   Crystallinity of CdSand ZnS Nanocrystallites
AU Kei Murakoshi Hiroji Hosokawa and Shozo Yanagida
PP 522-527
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LA eng
TE 1.3 mum Room Temperature Emission from InAs/GaAs Self-Assembled
   Quantum Dots
AU Ray Murray, David Childs, Surama Malik, Philip Siverns,
   Christine Roberts, Jean-Michel Hartmann and Paul Stavrinou
PP 528-530
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LA eng
TE Optically Induced Persistent Charge Storage Effects in Self
   Assembled InAs Quantum Dots
AU Jonathan J.Finley, Matthias Skalitz, Markus Arzberger,
   Artur Zrenner, Gerhard Boehm and Gerhard Abstreiter
PP 531-534
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	Nanostructure Characterization
LA eng
TE Optical and Resonant Tunnelling Spectroscopy of
   Self-Assembled Quantum Dot Systems
AU Antonio Polimeni, Amalia Patane, Andrew Thornton,
   Thomas Ihn,Laurence Eaves, Peter Main, Mohamed Henini and
   Geoffrey Hill
PP 535-538
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LA eng
TE Deep-Level Energy States in Nanostructural Porous Silicon
AU Takahiro Matsumoto, Hidenori Mimura, Nobuyoshi Koshida and
   Yasuaki Masumoto
PP 539-541
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LA eng
TE Potential Modulation of Semiconductor Dot Array System due to
   Photoexcitation
AU Ken-ichi Fujii, Takeshi Yoshizawa, Tyuzi Ohyama, Kenichi Oto,
   Sadao Takaoka,Kazuo Murase and Kenji Gamo
PP 542-545
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LA eng
TE Microscopic Photoluminescence Study of InAs Single Quantum Dots
   Grown on (100) GaAs
AU Kazuya Asaoka, Yutaka Ohno, Shigeru Kishimoto and
   Takashi Mizutani
PP 546-549
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LA eng
TE Photoluminescence Characteristics of Self-Assembled
   In_{0.5}Ga_{0.5}As Quantum Dotson Vicinal GaAs Substrates
AU Nien-Tze Yeh, Tzer-En Nee, Po-WenShiao, Mao-Nan Chang,
   Jen-InnChyi andChing-Ting Lee
PP 550-553
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TE Excitation Density and Temperature Dependent Photoluminescence
   of InGaAsSelf-Assembled Quantum Dots
AU Wen-Hao Chang, Tzu-Min Hsu, Kuei-FenTsai, Tzer-En Nee,
   Jen-Inn Chyiand Nien-Tze Yeh
PP 554-557
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LA eng
TE Photoluminescence Study of High-Quality InGaAs/GaAs
   QuantumDotson (111)B GaAs Substrates
AU Fu-Yi Tsai and Chien-Ping Lee
PP 558-562
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LA eng
TE Observation of Franz-Keldysh Oscillationsin InP Self-Assembled
   Quantum Dot Systems
AU Yasuaki Masumoto, Valentin Davydov, Ivan Ignatiev, Hong-Wen Ren
   and Shigeo Sugou
PP 563-565
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LA eng
TE Optical and Transport Properties of CdSe/ZnSe
   Self-OrganizedNanostructures:1-Dimensional versus 3-Dimensional
   Quantum Confinement
AU Alexei A.Toropov, Sergei V.Ivanov, Tatiana V.Shubina,
   Sergei V.Sorokin, Anton V.Lebedev, Alla A.Sitnikova,
   Piotr S.Kopev, Magnus Willander, Galia Pozina,Peder Bergman and
   Bo Monemar
PP 566-569
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	Optical Properties and Quantum Dot Lasers
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TE Persistent Spectral-Hole-Burning in Semiconductor Quantum
   Dotsand its Application to Spectroscopy
AU Yasuaki Masumoto
PP 570-576
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LA eng
TE Heterodyne-Detected Accumulated Photon-Echo Spectroscopy of CuCl
   Quantum Dots
AU Ryosuke Kuribayashi, Kuon Inoue, Kazuaki Sakoda,
   Viktor A.Tsekhomskii and Alexander V.Baranov
PP 577-580
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LA eng
TE Exciton-Phonon Interaction and Phonon Frequency Renormalization
   in Semiconductor Quantum Dots
AU Selvakumar V.Nair and Yasuaki Masumoto
PP 581-584
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LA eng
TE Temperature Dependence of Internal Quantum Efficiency of
   20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
AU Takashi Kojima, Hiroyuki Nakaya, Suguru Tanaka, Hideo Yasumoto,
   Shigeo Tamura and Shigehisa Arai
PP 585-588
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LA eng
TE Effect of Surface Termination on the Electronic States in
   Nanocrystalline Porous Silicon
AU Takahiro Matsumoto, Goh Arata, Selvakumar V.Nair and
   Yasuaki Masumoto
PP 589-592
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LA eng
TE Simulation of Visible Light Induced Effects in a TunnelJunction
   Array for Photonic Device Applications
AU Michiharu Tabe, Yoichi Terao, Ratno Nuryadi, Yasuhiko Ishikawa,
   Noboru Asahi and Yoshihito Amemiya
PP 593-596
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LA eng
TE Red Light Emitting Injection Lasers with Vertically-Aligned
   InP/GaInP Quantum Dots
AU Thomas Riedl, Elvira Fehrenbacher, Markus K.Zundel, Karl Eberl
   and Andreas Hangleiter
PP 597-600
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LA eng
TE Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser
   (J_{th}=11 A/cm^{2}, lambda=1.9 mum (77 K))
AU Sergey V.Zaitsev, Nikita Yu.Gordeev, Vladimir I.Kopchatov,
   Victor M.Ustinov, Alexey E.Zhukov, Anton Yu.Egorov,
   Alexey R.Kovsh and Peter S.Kopev
PP 601-604
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LA eng
TE Room-Temperature Operation of In_{0.5}Ga_{0.5} As Quantum Dot
   LasersGrown on Misoriented GaAs Substrates by Molecular Beam
   Epitaxy
AU Tzer-En Nee, Nien-Tze Yeh, Po-Wen Shiao, Jen-Inn Chyi and
   Ching-Ting Lee
PP 605-607
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