JOURNAL OF CRYSTAL GROWTH

 Journal of Crystal Growth
Volume 241, Issue 3, June 2002
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LA eng
AU Bing Liu, Cindy L.Berrie, Takeshi Kitajima and Stephen R.Leone
TE Arsenic-induced Ge island morphology changes during molecular
   beam epitaxy of Ge on Si(001)
PP 271-276
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LA eng
AU Toshinori Taishi, Xinming Huang, Tiefeng Wang, Ichiro Yonenaga
   and Keigo Hoshikawa
TE Behavior of dislocations due to thermal shock in B-doped Si seed
   in Czochralski Si crystal growth
PP 277-282
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LA eng
AU J.L.Plaza, P.Hidalgo, B.Mendez, J.Piqueras and E.Dieguez
TE Compositional and structural analysis of Nd-doped GaSb bulk
   crystals grown by the vertical Bridgman technique
PP 283-288
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LA eng
AU Seong-Hwan Jang et al.
TE Characteristics of GaN/Si(111) epitaxy grown using
   Al_{0.1}Ga_{0.9}N/AlN composite nucleation layers having
   different thicknesses of AlN
PP 289-296
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LA eng
AU In-Seok Seo et al.
TE The role of AlN buffer layer in Al_{x}Ga_{1-x}N/GaN
   heterostructures with x from 0.35 to 0.5 grown on sapphire (0001)
PP 297-303
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LA eng
AU Z.Y.Zhang et al.
TE Effect of InAlAs/InGaAs cap layer on optical properties of
   self-assembled InAs/GaAs quantum dots
PP 304-308
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LA eng
AU H.Fujioka, T.Ikeda, K.Ono, S.Ito and M.Oshima
TE Characteristics of InSb grown on single crystalline Mn-Zn
   ferrite substrates
PP 309-312
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LA eng
AU N.Hamdadou, J.C.Bernede and A.Khelil
TE Preparation of iron selenide films by selenization technique
PP 313-319
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LA eng
AU Li-Wei Sung, Hao-Hsiung Lin and Chih-Ta Chia
TE Cubic GaN grown on (001) GaAs substrate by RF plasma assisted
   gas source MBE
PP 320-324
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LA eng
AU Lizhen Zhang, Guofu Wang and Shukun Lin
TE Synthesis, growth and spectral properties of
   Tm^{3+}/Yb^{3+}-codoped YVO_{4} crystal
PP 325-329
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LA eng
AU M.Khenner, R.J.Braun and M.G.Mauk
TE A model for anisotropic epitaxial lateral overgrowth
PP 330-346
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LA eng
AU Hideki Abe et al.
TE Single-crystal growth of silver-lead oxide Ag_{5}Pb_{2}O_{6}
   from fused nitrates
PP 347-351
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LA eng
AU Yasunobu Akiyama, Nobuyuki Imaishi, Young-Sik Shin and
   Sang-Chul Jung
TE Macro- and micro-scale simulation of growth rate and composition
   in MOCVD of yttria-stabilized zirconia
PP 352-362
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LA eng
AU N.Zaitseva, L.Carman and I.Smolsky
TE Habit control during rapid growth of KDP and DKDP crystals
PP 363-373
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LA eng
AU L.Braescu, A.M.Balint, Z.Schlett and St.Balint
TE The growth of a single crystal filament and of a sheet with
   pre-established piece-wise constant diameter cross-section and
   half-thickness, respectively, from the melt in a vacuum by EFG
   method
PP 374-378
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LA eng
AU C.W.Lan, C.M.Hsu and C.C.Liu
TE Efficient adaptive phase field simulation of dendritic growth in
   a forced flow at low supercooling
PP 379-386
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LA eng
AU Toru Ujihara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami and
   Kazuo Nakajima
TE New method for measurement of interdiffusion coefficient in high
   temperature solutions based on Fick's first law
PP 387-394
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