APPLIED PHYSICS LETTERS

 APPLIED PHYSICS LETTERS 2000, Vol 77, Iss 9
~
LA eng
AU Hvozdara L.(Lubos.Hvozdara@tuwien.ac.at), Lugstein A.,
   Finger N., Gianordoli S., Schrenk W., Unterrainer K.,
   Bertagnolli E., Strasser G., Gornik E.
TE Quantum cascade lasers with monolithic air-semiconductor Bragg
   reflectors
PP 1241-1243
$$
LA eng
AU Lee Y.S.(yunslee@eecs.umich.edu), Meade T., DeCamp M.,
   Norris T.B., Galvanauskas A.
TE Temperature dependence of narrow-band terahertz generation from
   periodically poled lithium niobate
PP 1244-1246
$$
LA eng
AU Barad Y., Lu Y., Cheng Z.Y.(zxc7@psu.edu), Park S.E., Zhang Q.M.
TE Composition, temperature, and crystal orientation dependence of
   the linear electro-optic properties of Pb(Zn1/3Nb2/3)O-3-PbTiO3
   single crystals
PP 1247-1249
$$
LA eng
AU Jin X., Chuang S.L.(s-chuang@uiuc.edu)
TE Relative intensity noise characteristics of injection-locked
   semiconductor lasers
PP 1250-1252
$$
LA eng
AU Karve G., Bihari B., Chen R.T.(chen@ece.utexas.edu)
TE Demonstration of optical gain at 1.06 mum in a neodymium-doped
   polyimide waveguide
PP 1253-1255
$$
LA eng
AU Chang J.H.(jamaica@imr.tohoku.ac.jp), Cho M.W., Wang H.M.,
   Wenisch H., Hanada T., Yao T., Sato K., Oda O.
TE Structural and optical properties of high-quality ZnTe
   homoepitaxial layers
PP 1256-1258
$$
LA eng
AU Winnerl S.(s.winnerl@fz-juelich.de), Schomburg E., Brandl S.,
   Kus O., Renk K.F., Wanke M.C., Allen S.J., Ignatov A.A.,
   Ustinov V., Zhukov A., Kop'ev P.S.
TE Frequency doubling and tripling of terahertz radiation in a
   GaAs/AlAs superlattice due to frequency modulation of Bloch
   oscillations
PP 1259-1261
$$
LA eng
AU Fletcher R.B., Lidzey D.G.(d.g.lidzey@sheffield.ac.uk),
   Bradley D.D.C., Bernius M., Walker S.
TE Spectral properties of resonant-cavity, polyfluorene
   light-emitting diodes
PP 1262-1264
$$
LA eng
AU Kortshagen U.(uk@me.umn.edu), Heil B.
TE Experimental observation of a "convective cell" in electron
   phase space in an inductively coupled radio-frequency plasma
PP 1265-1267
$$
LA eng
AU Damilano B.(bd@crhea.cnrs.fr)(ng@crhea.cnrs.fr), Grandjean N.,
   Massies J., Siozade L., Leymarie J.
TE InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting
   from blue to red at 300 K
PP 1268-1270
$$
LA eng
AU Jiang F.M.(fmjiang@hotmail.com), Kojima S.
TE Microheterogeneity and relaxation in
   0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) relaxor single crystals
PP 1271-1273
$$
LA eng
AU Sharma N.(ns237@cam.ac.uk), Thomas P., Tricker D., Humphreys C.
TE Chemical mapping and formation of V-defects in InGaN multiple
   quantum wells
PP 1274-1276
$$
LA eng
AU Lin I.N.(inlin@mx.nthu.edu.tw), Perng K., Lee L.H., Shih C.F.,
   Liu K.S., Evans G.A., Steeds J.W.
TE Comparison of the effect of boron and nitrogen incorporation on
   the nucleation behavior and electron-field-emission properties
   of chemical-vapor-deposited diamond films
PP 1277-1279
$$
LA eng
AU Pan Z.(panzhong@red.semi.ac.cn), Li L.H., Zhang W., Lin Y.W.,
   Wu R.H., Ge W.
TE Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells
   grown by plasma-assisted molecular-beam epitaxy
PP 1280-1282
$$
LA eng
AU Kawashima H.(e9506@etl.go.jp), Furuki M., Tatsuura S., Tian M.,
   Sato Y., Pu L.S., Tani T.
TE Optical gate action of a molecular thin film probed with
   femtosecond near-field optical microscopy
PP 1283-1285
$$
LA eng
AU Kimura S.(s-kimura@bl.jp.nec.com), Kimura H., Kobayashi K.,
   Oohira T., Izumi K., Sakata Y., Tsusaka Y., Yokoyama K.,
   Takeda S., Urakawa M., Kagoshima Y., Matsui J.
TE High-resolution microbeam x-ray diffractometry applied to
   InGaAsP/InP layers grown by narrow-stripe selective
   metal-organic vapor phase epitaxy
PP 1286-1288
$$
LA eng
AU Schroeder B.R.(bretts@u.washington.edu), Meng S., Bostwick A.,
   Olmstead M.A., Rotenberg E.
TE Epitaxial growth of laminar crystalline silicon on CaF2
PP 1289-1291
$$
LA eng
AU Wu X.L.(hkxlwu@netra.nju.edu.cn), Siu G.G., Stokes M.J.,
   Fan D.L., Gu Y., Bao X.M.
TE Blue-emitting beta-SiC fabricated by annealing C-60 coupled on
   porous silicon
PP 1292-1294
$$
LA eng
AU Zhang K.(kzhang@physnet.uni-hamburg.de), Heyn C., Hansen W.,
   Schmidt T., Falta J.
TE Strain status of self-assembled InAs quantum dots
PP 1295-1297
$$
LA eng
AU Kuok M.H.(phykmh@nus.edu.sg), Ng S.C., Zhang V.L.
TE A Brillouin study of the angular dispersion of generalized
   surface and pseudosurface acoustic waves on the (001) surface of
   InSb
PP 1298-1300
$$
LA eng
AU Adachi D.(adachi@semi.ee.es.osaka-u.ac.jp), Hasui S., Toyama T.,
   Okamoto H.
TE Structural and luminescence properties of nanostructured ZnS:Mn
PP 1301-1303
$$
LA eng
AU Liao X.Z.(liao@emu.usyd.edu.au), Zou J., Cockayne D.J.H.,
   Jiang Z.M., Wang X., Leon R.
TE Composition and its impact on shape evolution in dislocated
   Ge(Si)/Si islands
PP 1304-1306
$$
LA eng
AU Sanguinetti S.(stefano.sanguinetti@mater.unimib.it),
   Padovani M., Gurioli M., Grilli E., Guzzi M., Vinattieri A.,
   Colocci M., Frigeri P., Franchi S.
TE Carrier transfer and photoluminescence quenching in InAs/GaAs
   multilayer quantum dots
PP 1307-1309
$$
LA eng
AU Croke E.T.(croke@hrl.com), Grosse F., Vajo J.J., Gyure M.F.,
   Floyd M., Smith D.J.
TE Substitutional C fraction and the influence of C on Si dimer
   diffusion in Si1-yC(y) alloys grown on (001) and (118) Si
PP 1310-1312
$$
LA eng
AU Seifert G.(seifert@phys.uni.paderborn.de), Kohler T.,
   Frauenheim T.
TE Molecular wires, solenoids, and capacitors by sidewall
   functionalization of carbon nanotubes
PP 1313-1315
$$
LA eng
AU Qiu X.G.(qiul@postman.riken.go.jp), Segawa Y., Xue Q.K.,
   Xue Q.Z., Sakurai T.
TE Influence of threading dislocations on the near-bandedge
   photoluminescence of wurtzite GaN thin films on SiC substrate
PP 1316-1318
$$
LA eng
AU Ma Q.(qingma@aps.anl.gov), Moldovan N., Mancini D.C.,
   Rosenberg R.A.
TE Sample size effect in photoelectrochemical etching of n-GaAs
PP 1319-1321
$$
LA eng
AU Rahman M.(mrahman@physics.gla.ac.uk), Mathieson K.
TE Topographic effects in low-energy radiation damage
PP 1322-1324
$$
LA eng
AU Duan N., Sleight A.W.(arthur.sleight@orst.edu), Jayaraj M.K.,
   Tate J.
TE Transparent p-type conducting CuScO2+x films
PP 1325-1326
$$
LA eng
AU Ahoujja M., Yeo Y.K., Hengehold R.L., Pomrenke G.S., Look D.C.,
   Huffman J.
TE Electrical properties of boron-doped p-SiGeC grown on n(-)-Si
   substrate
PP 1327-1329
$$
LA eng
AU Agnihotri O.P.(opagni@physics.iitd.ernet.in), Sehgal H.K.,
   Pal R., Gopal V.
TE Photon-induced modifications in cadmium telluride/mercury
   cadmium telluride heterostructure interfaces
PP 1330-1332
$$
LA eng
AU Boggess T.F.(thomas-boggess@uiowa.edu), Olesberg J.T., Yu C.,
   Flatte M.E., Lau W.H.
TE Room-temperature electron spin relaxation in bulk InAs
PP 1333-1335
$$
LA eng
AU Someya T.(someya@iis.u-tokyo.ac.jp), Hoshino K., Harris J.C.,
   Tachibana K., Arakawa Y.
TE Photoluminescence from sub-nanometer-thick GaN/Al0.8Ga0.2N
   quantum wells
PP 1336-1338
$$
LA eng
AU Khan M.A.(asif@engr.sc.edu), Hu X., Tarakji A., Simin G.,
   Yang J., Gaska R., Shur M.S.
TE AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect
   transistors on SiC substrates
PP 1339-1341
$$
LA eng
AU Toth M.(mt272@phy.cam.ac.uk), Kucheyev S.O., Williams J.S.,
   Jagadish C., Phillips M.R., Li G.
TE Imaging charge trap distributions in GaN using environmental
   scanning electron microscopy
PP 1342-1344
$$
LA eng
AU Bourdon G., Robert I., Adams R., Nelep K., Sagnes I.,
   Moison J.M., Abram I.(izo.abram@rd.francetelecom.fr)
TE Room temperature enhancement and inhibition of spontaneous
   emission in semiconductor microcavities
PP 1345-1347
$$
LA eng
AU Neu G.(gneu@crhea.cnrs.fr), Teisseire M., Frayssinet E.,
   Knap W., Sadowski M.L., Witowski A.M., Pakula K.,
   Leszczynski M., Prystawko P.
TE Far-infrared and selective photoluminescence studies of shallow
   donors in GaN hetero- and homoepitaxial layers
PP 1348-1350
$$
LA eng
AU Garcia N.(nicolas.garcia@fsp.csic.es)
TE Conducting ballistic magnetoresistance and tunneling
   magnetoresistance: Pinholes and tunnel barriers
PP 1351-1353
$$
LA eng
AU Gotz M.(martin.goetz@ptb.de), Khanin V.V., Schulze H.,
   Zorin A.B., Niemeyer J., Il'ichev E., Chwala A., Hoenig H.E.,
   Meyer H.G.
TE Harmonic current-phase relation in Nb-Al-based
   superconductor/insulator/normal
   conductor/insulator/superconductor-type Josephson junctions
   between 4.2 K and the critical temperature
PP 1354-1356
$$
LA eng
AU Rippard W.H., Perrella A.C., Chalsani P., Albert F.J.,
   Katine J.A., Buhrman R.A.(rab8@cornell.edu)
TE Observation of magnetization reversal of thin-film permalloy
   nanostructures using ballistic electron magnetic microscopy
PP 1357-1359
$$
LA eng
AU Wang F.W., Zhang X.X.(phxxz@ust.hk), Hu F.X.
TE Large magnetic entropy change in TbAl2 and (Tb0.4Gd0.6)Al-2
PP 1360-1362
$$
LA eng
AU Shono T., Hasegawa T.,
   Fukumura T.(fukumura@oxide.rlem.titech.ac.jp), Matsukura F.,
   Ohno H.
TE Observation of magnetic domain structure in a ferromagnetic
   semiconductor (Ga, Mn)As with a scanning Hall probe microscope
PP 1363-1365
$$
LA eng
AU Atkin I.L., Satchell J.S., Hirst P.J.,
   Humphreys R.G.(rghumphreys@dera.gov.uk)
TE Bit error probabilities in high temperature superconductor logic
PP 1366-1368
$$
LA eng
AU Yun S.H., Pedarnig J.D., Rossler R.,
   Bauerle D.(dieter.baeuerle@jk.uni-linz.ac.at), Obradors X.
TE In-plane and out-of-plane resistivities of vicinal Hg-1212 thin
   films
PP 1369-1371
$$
LA eng
AU Yang B.(blyang@sr.hei.co.kr), Suh C.W., Lee C.G., Kang E.Y.,
   Kang Y.M., Lee S.S., Hong S.K., Kang N.S., Yang J.M.
TE Hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories
PP 1372-1374
$$
LA eng
AU da Silva F.C.S.(fcss@ifi.unicamp.br), Ferrari E.F., Knobel M.,
   Torriani I.L., dos Santos D.R.
TE Controlling Fe nanocrystallization in amorphous Fe86Zr7Cu1B6 by
   linear varying current Joule heating
PP 1375-1377
$$
LA eng
AU Ahn J.H., McIntyre P.C.(pcml@lelan.stanford.edu),
   Mirkarimi L.W., Gilbert S.R., Amano J., Schulberg M.
TE Deuterium-induced degradation of (Ba, Sr)TiO3 films
PP 1378-1380
$$
LA eng
AU Houssa M.(michel.houssa@fys.kuleuven.ac.be), Stesmans A.,
   Naili M., Heyns M.M.
TE Charge trapping in very thin high-permittivity gate dielectric
   layers
PP 1381-1383
$$
LA eng
AU Deguchi K.(deguchi@eie.eng.osaka-u.ac.jp), Ishida A., Uno S.,
   Kamakura Y., Taniguchi K.
TE Degradation of direct-tunneling gate oxide under hot-hole
   injection
PP 1384-1386
$$
LA eng
AU Jiang W.H., Cao W.W.(cao@math.psu.edu)
TE Intrinsic and coupling-induced elastic nonlinearity of
   lanthanum-doped lead magnesium niobate-lead titanate
   electrostrictive ceramic
PP 1387-1389
$$
LA eng
AU Caputo D., de Cesare G.(decesare@die.ing.uniromal.it),
   Kellezi V., Palma F.
TE Amorphous silicon junction field-effect transistor for digital
   and analog applications
PP 1390-1392
$$
LA eng
AU Woo H.S., Czerw R.(rczerw@clemson.edu), Webster S.,
   Carroll D.L., Ballato J., Strevens A.E., O'Brien D., Blau W.J.
TE Hole blocking in carbon nanotube-polymer composite organic
   light-emitting diodes based on poly (m-phenylene
   vinylene-co-2,5-dioctoxy-p-phenylene vinylene)
PP 1393-1395
$$
LA eng
AU Tani M.(tani@crl.go.jp), Lee K.S., Zhang X.C.
TE Detection of terahertz radiation with low-temperature-grown
   GaAs-based photoconductive antenna using 1.55 mum probe
PP 1396-1398
$$
LA eng
AU Smith P.A., Nordquist C.D., Jackson T.N.,
   Mayer T.S.(tsm2@psu.edu), Martin B.R., Mbindyo J., Mallouk T.E.
TE Electric-field assisted assembly and alignment of metallic
   nanowires
PP 1399-1401
$$
LA eng
AU Dhar L., Rogers J.A.(jarogers@lucent.com)
TE High frequency one-dimensional phononic crystal characterized
   with a picosecond transient grating photoacoustic technique
PP 1402-1404
$$
LA eng
AU Makino T., Chia C.H., Tuan N.T., Segawa Y., Kawasaki M.,
   Ohtomo A., Tamura K., Koinuma H.
TE Exciton spectra of ZnO epitaxial layers on lattice-matched
   substrates grown with laser-molecular-beam epitaxy (vol 76, pg
   3549, 2000
PP 1405
$$